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APPLIED PHYSICS. A, MATERIALS SCIENCE & PROCESSING
Rivista
Codice:
E013109
ISSN:
0947-8396
Dati Generali
Dati Generali
Pubblicazioni (6)
Analysis of 4H-SiC MOSFET with distinct high-k/4H-SiC interfaces under high temperature and carrier-trapping conditions
Articolo
Design considerations on 4H-SiC-based p–n junction betavoltaic cells
Articolo
Modeling and simulation of an InGaP/GaAs heterojunction betavoltaic cell powered by promethium-147
Articolo
Temperature and SiO2/4H-SiC interface trap effects on the electrical characteristics of low breakdown voltage MOSFETs
Articolo
Thorium-228 as emitting source for InGaP/GaAs-based heterojunction alphavoltaic cells
Articolo
Unveiling the structural and electrical features of Al/p-CZTS thin film schottky structure for photovoltaic application: a comparative parameter extraction study
Articolo
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