An Experimental Study on the Performance of Two Temperature Sensors Based on 4H-SiC Diodes
Contributo in Atti di convegno
Data di Pubblicazione:
2016
Citazione:
An Experimental Study on the Performance of Two Temperature Sensors Based on 4H-SiC Diodes / Rao, S., Pangallo, G., DELLA CORTE, F.G.. - In: PROCEDIA ENGINEERING. - ISSN 1877-7058. - 168:(2016), pp. 729-732. (30th Eurosensors Conference, Eurosensors 2016; Budapest; Hungary; 4 September 2016 through 7 September 2016 Budapest, Hungary 4 September 2016 through 7 September 2016) [10.1016/j.proeng.2016.11.262].
Abstract:
The performance of two temperature sensors based on 4H-SiC diodes are investigated. Both devices show a good linear dependence on temperature of the difference between the forward bias voltages measured on two identical diodes (Schottky or p-i-n) yet biased at different constant currents. The Schottky diodes-based sensor shows a high sensitivity (S=5.11mV/K) whereas the p-i-n structure has a highly linear output proportional to the absolute temperature
Tipologia CRIS:
4.1 Contributo in Atti di convegno
Elenco autori:
Rao, S.; Pangallo, G.; DELLA CORTE, Francesco Giuseppe
Link alla scheda completa:
Titolo del libro:
Procedia Engineering
Pubblicato in: