Simulation analysis of the DC current gain in an n-p-n a-Si:H/SiGe/Si heterojunction bipolar transistor

Academic Article

Publication Date:

2004

Short description:

Simulation analysis of the DC current gain in an n-p-n a-Si:H/SiGe/Si heterojunction bipolar transistor / Della Corte, F.G., Pezzimenti, F.. - In: MICROELECTRONICS JOURNAL. - ISSN 0959-8324. - 35:(2004), pp. 411-415. [10.1016/j.mejo.2004.01.006]

Iris type:

1.1 Articolo in rivista

List of contributors:

Della Corte, F. G.; Pezzimenti, F.

Authors of the University:

PEZZIMENTI Fortunato

Handle:

https://iris.unirc.it/handle/20.500.12318/460

Published in:

MICROELECTRONICS JOURNAL

Journal