48
Experimental Physics
REGGIO DI CALABRIA
Overview
Date/time interval
Syllabus
Course Objectives
The training objective of the course "Physics of solid state devices" is to transfer to students the fundamental principles and physical laws underlying the operation of electronic and photonic devices, the knowledge of which is essential for a full understanding of their operation and for the design of innovative devices, also in light of recent rapid progress in nanotechnology.
Particular attention is paid to the resolution of problems on the crystalline structures of semiconductors of interest for electronic / photonic applications (Si, Ge, GaAs, GaN, SiC), on the band structure of homogeneous and heterojunctions, on the electrostatics of homo- and hetero-junctions , on the optical properties of solids.
DUBLIN DESCRIPTORS
Knowledge and understanding: upon passing the exam the student knows and has understood the classification of the main crystalline structures of interest for electronics / photonics, the mechanisms that determine the formation of a potential barrier in homo- and hetero-junctions, the fundamentals of Quantum Theory of solids and their application to energy band diagrams in generic semiconductor structures, the physical principles underlying the operation of light-emitting devices (LEDs and laser diodes)
Applying knowledge and understanding: upon passing the exam, the student is able to apply the theoretical knowledge acquired to solve even complex semiconductor physics problems using the fundamental laws of Quantum Theory of solids, to trace band diagrams and calculate the built-in potential in homo- and hetero-junctions, to compare semiconductors and solids with different optical properties
Making judgments: upon passing the exam, the student is able to critically examine the results obtained in solving problems. Following the passing of the exam, the student will be able to recognize situations in which to apply the acquired skills, to identify the type of problem and to independently evaluate possible alternatives for its resolution.
Communication skills: following the passing of the exam, the student is able to communicate the knowledge acquired through a technical-scientific language suitable for specialist and non-specialist interlocutors.
Learning skills: following the passing of the exam, the student is able to autonomously deepen the knowledge acquired and to apply it autonomously to the study of new topics to be addressed in the continuation of their study path and in the workplace.
Course Prerequisites
no prerequisites
Teaching Methods
Classroom lessons and exercises
Assessment Methods
The exam consists of two tests, one written and one oral.
The written test aims to assess the student's ability to apply the knowledge acquired during the course to the resolution of simple problems of Semiconductor Physics concerning crystal structures, the basic principles of Quantum Mechanics, the carrier concentrations in doped semiconductors, the metal-semiconductor junctions. Passing the written test allows access to the oral test.
The oral exam is aimed at ascertaining the level of knowledge and understanding of the course contents, assessing autonomy of judgment, communication skills and learning skills . The oral test consists in the discussion of the written test, in questions and/or exercises on the course contents.
The final mark of the examination is determined taking into account both the written and oral tests.
Evaluation scheme
30 cum laude: complete, in-depth and critical knowledge of the topics, excellent linguistic skills, complete and original interpretative skills, full ability to independently apply knowledge to solve the proposed problems;
28-30: complete and in-depth knowledge of the topics, excellent linguistic properties, complete and effective interpretative skills, able to independently apply the knowledge to solve the proposed problems;
24 - 27: knowledge of the topics with a good degree of command, good linguistic skills, correct and safe interpretative skills, good ability to correctly apply most of the knowledge to solve the proposed problems;
20 - 23: adequate knowledge of the topics but poor command of them, satisfactory linguistic skills, correct interpretative skills, more than sufficient ability to independently apply the knowledge to solve the proposed problems;
18-19: basic knowledge of the main topics, basic knowledge of technical language, sufficient interpretative ability, sufficient ability to apply the basic knowledge acquired;
<18 Insufficient: the student does not have an acceptable knowledge of the topics covered during the course.
Texts
Neamen D.A., "Semiconductor Physics and Devices Basic Principles", Mc Graw-Hill
S.M. Sze, "Physics of Semiconductor Devices", Wiley-Interscience
R.S. Muller, T.I. Kamins "Dispositivi Elettronici nei circuiti integrati", Bollati Boringhieri
Contents
"Solid State Device Physics" Program ; Academic Year 2025-2026
Introduction to the structure of matter
Crisis of the classical physics - Atomic models: Thompson, Rutherford, Bohr - Wave nature of matter - Schroedinger quantum theory and wave function - Examples: free particle, potential well, potential barrier, harmonic oscillator.
Solids
Crystalline, polycrystalline and amorphous materials - Crystalline structure of Silicon, Germanium, Gallium Arsenide, Gallium nitride, Silicon carbide - Polytypism - Vibrations of crystals - Diffraction of waves by a crystal - Diffraction of X-rays - Bragg's law for rays X – Conditions for diffraction
Fermi gas
Free electron gas in one, two and three dimensions - Density of states - Electrons in a periodic potential - Energy bands - Kronig-Penney model - Classification of materials based on the band structure: metals, semiconductors and insulators.
Semiconductor crystals
Intrinsic and extrinsic semiconductors - Concentration of intrinsic carriers - Band gap - Average free path and average free time - Mobility - Conductivity - Diffusion of carriers - Einstein relationship - Dependence on temperature of Egap and mobility - Fermi energy - Calculation of concentration of electrons and holes in the conduction band and in the valence band - Fermi level in intrinsic and doped semiconductors - Effective density of states Nc (Nv) in the conduction (valence) band - Mass action law - Carrier injection - Generation and recombination processes - Direct recombination - Indirect recombination
Junctions
p-n junction - Thermodynamic equilibrium condition - Electrostatic of the pn junction - Depletion region - Abrupt junction - Built-in potential Vbi – Depletion capacity - Abrupt asymmetric junction - Electrostatics of the metal-semiconductor structure- Heterojunctions - Types of heterojunctions: nP, Np , nN, pP - Energy band diagrams - Two-dimensional electron gas - Heterojunction electrostatics - Tunnel diode - Optical absorption - Optical properties of semiconductors; direct and indirect band gap - Laser diode - Stimulated emission and population inversion - Optical cavity
Metal-Oxide-Semiconductor Structure
Band diagram of the MOS structure - Effect of the bias voltage - Flat band Condition - Accumulation, depletion, inversion - Capacitance of the MOS system - Electronic properties of the MOS system.
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