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IEEE TRANSACTIONS ON ELECTRON DEVICES
Rivista
Codice:
E079923
ISSN:
0018-9383
Dati Generali
Dati Generali
Pubblicazioni (8)
4H-SiC p-i-n diode as highly linear temperature sensor
Articolo
A temperature all-silicon micro-sensor based on the thermo-optic effect
Articolo
Analysis of trapping effects on the forward current-voltage characteristics of al-implanted 4H-SiC p-i-n Diodes
Articolo
Design considerations for a-Si:H/SiGe/Si heterojunction bipolar transistors
Articolo
Modeling of the steady state and switching characteristics of a normally-off 4H-SiC trench bipolar-mode FET
Articolo
Numerical simulation study of a low breakdown voltage 4H-SiC MOSFET for photovoltaic module-level applications
Articolo
Use of amorphous silicon for active photonic devices
Articolo
V2O5/ 4H-SiC Schottky Diode Temperature Sensor: Experiments and Model
Articolo
No Results Found
