Zeolite LTA deposition on silicon wafer

The deposition of zeolite LTA layer on
silicon wafer, from homogeneous synthesis systems,
trough the seeding method, has been systematically
investigated and high quality, oriented zeolite films are
obtained. Basically the seeding method consists in
various steps. In the first step the support surface is
modified in order to promote the adhesion of presynthesized
colloidal zeolite seeds, oppositely charged.
The seeded support is then hydrothermally treated in
the same synthesis solution to allow the growth of
zeolite seeds into a dense film. In this work it was
shown that the ageing of the synthesis solution before
zeolite crystallization process, sensibly affects both
size, amount and formation kinetics of the zeolite LTA
crystals deposited on the seeded silicon surface.