Deep insights on the performance of different structures of InGaN-based tandem photovoltaic cells: path towards the design of high efficiency PV modules

This paper deals with the performance analysis of different indium gallium nitride (InGaN)-based solar cells. In particular, single, dual, and triple junction structures are investigated by means of a detailed numerical simulation study involving an accurate modeling of the fundamental material properties. The presented results include the calculated electric field, electric potential, current density, spectral response, and photo-generation/recombination rate. The solar cells electrical outputs in terms of short circuit current density (JSC), open circuit voltage (VOC), fill factor (FF), maximum power (Pmax), and conversion efficiency (eta) are extracted from the current density/voltage J(V) and power density/voltage P(V) characteristics. To check the coherence of the obtained results, pertinent literature data are reported. Under the AM1.5G illumination conditions, the calculated conversion efficiency exceeds 18%, 28%, and 33% for the single, dual, and triple junction cells, respectively. The obtained results aim to provide conceptual guidance for selecting the appropriate device configuration in the design of highly efficient photovoltaic (PV) modules.