An Analytical Model of the Switching Behavior of 4H-SiC p+-n-n+ Diodes from Arbitrary Injection Conditions
Articolo
Data di Pubblicazione:
2012
Citazione:
An Analytical Model of the Switching Behavior of 4H-SiC p+-n-n+ Diodes from Arbitrary Injection Conditions / S., B., F. G., D.C., ., D.B., G. D., L., DELLA CORTE, F.G.. - In: IEEE TRANSACTIONS ON POWER ELECTRONICS. - ISSN 0885-8993. - 27:3(2012), pp. 1641-1652. [10.1109/TPEL.2011.2164097]
Abstract:
An analytical model of the switching behavior of SiC
diodes is presented. The model gives an accurate description of the
current and voltage transient for a wide range of reverse to forward
current ratios and allows one to evaluate the spatial-temporal
distributions of carriers density, current components and electric
field along the base at a generic instant of the whole transient. Using
this model, a large-signal circuit is derived that is useful for
circuital analysis of diode under generic operation conditions. The
accuracy of the model is verified by comparisons with numerical
simulations and experimental results
diodes is presented. The model gives an accurate description of the
current and voltage transient for a wide range of reverse to forward
current ratios and allows one to evaluate the spatial-temporal
distributions of carriers density, current components and electric
field along the base at a generic instant of the whole transient. Using
this model, a large-signal circuit is derived that is useful for
circuital analysis of diode under generic operation conditions. The
accuracy of the model is verified by comparisons with numerical
simulations and experimental results
Tipologia CRIS:
1.1 Articolo in rivista
Keywords:
diodes; 4H SiC; turn-off
Elenco autori:
S., Bellone; F. G., Della Corte; ., Di Benedetto; G. D., Licciardo; DELLA CORTE, Francesco Giuseppe
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