Data di Pubblicazione:
2012
Citazione:
A 2.5 ns switching time mach-zehnder modulator in as-deposited a-Si:H / Rao, S., Coppola, G., Gioffrè, M.A., Della Corte, F.G., DELLA CORTE, F.G.. - In: OPTICS EXPRESS. - ISSN 1094-4087. - 20:9(2012), pp. 9351-9356. [10.1364/OE.20.009351]
Abstract:
A very simple and fast Mach-Zehnder electro-optic modulator
based on a p-i-n configuration, operating at λ=1.55 μm, has been fabricated
at 170°C using the low cost technology of hydrogenated amorphous silicon
(a-Si:H). In spite of the device simplicity, refractive index modulation was
achieved through the free carrier dispersion effect resulting in characteristic
rise and fall times of ~2.5 ns. By reverse biasing the p-i-n device, the
voltage-length product was estimated to be Vπ·Lπ=40 V⋅cm both from static
and dynamic measurements. Such bandwidth performance in as-deposited
a-Si:H demonstrates the potential of this material for the fabrication of fast
active photonic devices integrated on standard microelectronic substrates.
based on a p-i-n configuration, operating at λ=1.55 μm, has been fabricated
at 170°C using the low cost technology of hydrogenated amorphous silicon
(a-Si:H). In spite of the device simplicity, refractive index modulation was
achieved through the free carrier dispersion effect resulting in characteristic
rise and fall times of ~2.5 ns. By reverse biasing the p-i-n device, the
voltage-length product was estimated to be Vπ·Lπ=40 V⋅cm both from static
and dynamic measurements. Such bandwidth performance in as-deposited
a-Si:H demonstrates the potential of this material for the fabrication of fast
active photonic devices integrated on standard microelectronic substrates.
Tipologia CRIS:
1.1 Articolo in rivista
Keywords:
integrated optics; modulator; electro-optical devices
Elenco autori:
Rao, S.; Coppola, G.; Gioffrè, M. A.; Della Corte, F. G.; DELLA CORTE, Francesco Giuseppe
Link alla scheda completa:
Pubblicato in: